In-cell touch display panel

ABSTRACT

The in-cell touch display panel has a display area and a non-display area. Multiple pixel structures are disposed in the display area. Transparent conductive layers, metal layers, and first to fourth insulation layers are disposed in the pixel structures. The thickness of the third insulation layer is greater than or equal to that of the second insulation layer. The thickness of the third insulation layer is 1.2 or more times of that of the fourth insulation layer. The thickness of the third insulation layer is greater than or equal to 5000 Å. The sum of the thickness of the third insulation layer and the thickness of the fourth insulation layer is greater than or equal to 7000 Å.

RELATED APPLICATIONS

This application claims priority to China Application Serial Number201611244094.2 filed Dec. 29, 2016, which is herein incorporated byreference.

BACKGROUND Field of Invention

The present invention relates to a display and touch panel. Moreparticularly, the present invention relates to an in-cell touch displaypanel with a narrow border.

Description of Related Art

A TDDI (Touch with Display Driver Integration) single chip is configuredto connect all of data lines and touch sensing lines which are connectedto touch electrodes, thereby enabling the single chip to control bothfunctions of touch and display. However, the data lines and the touchsensing lines would concentrate toward the chip area in a non-displayarea, and thus are overlapped with each other. The signals transmittedon the data lines and the touch sensing lines may be interfered by eachother, and therefore the functions of display and touch are bothaffected. It is an issue in the art that how to address the problems ofoverlapped trace routes and the interference between the data lines andthe touch sensing lines in the non-display area.

SUMMARY

To solve the trace route problem, the invention provides an in-celltouch display panel, in which the conducting lines in the non-displayare not overlapped with each other.

Embodiments of the invention provide an in-cell touch display panelhaving a display area and a non-display area, in which the in-cell touchdisplay panel includes the following units. Multiple gate lines andmultiple data lines are intersected with each other on a firstsubstrate. Multiple touch sensing lines are disposed on the firstsubstrate, in which the touch sensing lines are not spatially connectedwith the data lines in the display area. Multiple pixel regions aredisposed in areas where the gate lines are intersected with the datalines in the display area, in which each of the pixel regions has apixel structure, each of the pixel structures includes a pixel electrodeformed by a first transparent conductive layer. A common electrode isformed by a patterned second transparent conductive layer, in which thecommon electrode includes multiple touch electrodes in the display area,each of the touch electrodes corresponds to more than one of the pixelelectrodes, each of the pixel electrodes corresponds to a sub-commonelectrode which is a portion of the touch electrode, and each of thetouch electrodes is electrically connected to at least one of the touchsensing lines. A thin film transistor is disposed in one of the pixelstructures, in which the thin film transistor includes a gate, a source,a drain and a semiconductor layer, the source is electrically connectedto one of the data lines, and one of the pixel electrodes iselectrically connected to the drain. Multiple display pads and multipletouch pads are disposed in the non-display area. A liquid crystal layeris disposed between the first substrate and a second substrate. A firstinsulation layer is disposed between the gate and the semiconductorlayer. A second insulation layer is disposed on the first insulationlayer. A third insulation layer is disposed on the second insulationlayer. A fourth insulation layer is disposed on the third insulationlayer. The sub-common electrodes are disposed on one of the thirdinsulation layer and fourth insulation layer. The thickness of the thirdinsulation layer is greater than or equal to the thickness of the secondinsulation layer. The thickness of the third insulation layer is 1.2 ormore times of the thickness of the fourth insulation layer. Thethickness of the third insulation layer is greater than or equal to 5000Å. The sum of the thickness of the third insulation layer and thethickness of the fourth insulation layer is greater than or equal to7000 Å.

In some embodiments, each of the data lines is electrically connected toone of the display pads. Each of the touch lines is electricallyconnected to one of the touch pads. The non-display area includes asignal line transferring area and a fan-out area, in which the signalline transferring area is located between the display area and thefan-out area, and the touch pads and the display pads are disposed inthe fan-out area. One of the display pads is disposed between two of thetouch pads, and one of the touch pads is disposed between two of thedisplay pads.

In some embodiments, the number of the touch pads is less than thenumber of the display pads, the display pads and the touch pads arearranged as multiple rows, and one of the rows consists of a portion ofthe touch pads.

In some embodiments, the display pads are disposed between the touchpads and the display area.

In some embodiments, the touch pads are disposed between the displaypads and the display area.

In some embodiments, the number of the touch pads is less than a numberof the display pads. The display pads and the touch pads are arranged asmultiple rows, a first row of the rows consists of a portion of thedisplay pads, and a second row of the rows includes a portion of thedisplay pads and a portion of the touch pads.

In some embodiments, the in-cell touch display panel further includes adriving circuit disposed in the non-display area and being electricallyconnected to the display pads and the touch pads. In a display period,the driving circuit transmits pixel data to one of the pixel electrodesthrough one of the data lines and the thin film transistor. In the touchsensing period, the driving circuit generates a touch sensing signalaccording to a voltage variation of the touch electrode.

In some embodiments, a first metal layer is disposed on the firstsubstrate, in which the first metal layer includes a gate. A firstinsulation layer is disposed on the first metal layer, and asemiconductor layer is disposed on the first insulation layer. A secondmetal layer disposed on the semiconductor layer, in which the secondmetal layer includes a source and a drain. A second insulation layer isdisposed on the second metal layer, and the second insulation layer hasa first contact hole to expose the drain. A third insulation layer isdisposed on the second insulation layer, and the third insulation layerhas a second contact hole corresponding to the first contact hole. Thepixel electrodes are disposed on the third insulation layer, and one ofthe pixel electrodes is electrically connected to the drain through thesecond contact hole and the first contact hole. A third metal layer isdisposed on the third insulation layer, in which the third metal layerincludes the touch sensing lines. A fourth insulation layer is disposedon the third metal layer, and the fourth insulation layer has a thirdcontact hole to expose the touch sensing lines. The sub-commonelectrodes are disposed on the fourth insulation layer, and one of thesub-common electrodes is electrically connected to one of the touchsensing lines through the third contact hole.

In some embodiments, a first metal layer is disposed on the firstsubstrate, in which the first metal layer includes a gate. A firstinsulation layer is disposed on the first metal layer, and asemiconductor layer is disposed on the first insulation layer. A secondmetal layer is disposed on the semiconductor layer, the second metallayer includes a source and a drain. A second insulation layer isdisposed on the second metal layer, and the second insulation layer hasa first contact hole to expose the drain. A third metal layer isdisposed on the second insulation layer, in which the touch sensinglines are formed by the third metal layer in the display area. A thirdinsulation layer is disposed on the third metal layer, the thirdinsulation layer has a second contact hole to expose the touch sensinglines, and the third insulation layer has a third contact holecorresponding to the first contact hole. The sub-common electrodes aredisposed on the third insulation layer, one of the sub-common electrodesis electrically connected to one of the touch sensing lines through thesecond contact hole. A fourth insulation layer is disposed on thesub-common electrodes, and the fourth insulation layer has a fourthcontact hole corresponding to the third contact hole. The pixelelectrodes are disposed on the fourth insulation layer, one of the pixelelectrodes is electrically connected to the drain through the fourthcontact hole, the third contact hole and the first contact hole.

In some embodiments, a first metal layer is disposed on the firstsubstrate, in which the first metal layer includes a gate. A firstinsulation layer is disposed on the first metal layer, and asemiconductor layer is disposed on the first insulation layer. A secondmetal layer is disposed on the semiconductor layer, in which the secondmetal layer includes a source and a drain. A second insulation layer isdisposed on the second metal layer, and the second insulation layer hasa first contact hole to expose the drain. A third insulation layer isdisposed on the second insulation layer, the third insulation layer hasa second contact hole corresponding to the first contact hole. The pixelelectrodes are disposed on the third insulation layer, one of the pixelelectrodes is electrically connected to the drain through the secondcontact hole and the first contact hole. A third metal layer disposed onthe third insulation layer, in which the touch sensing lines are formedby the third metal layer in the display area. A fourth insulation layeris disposed on the third metal layer, and the fourth insulation layerhas a third contact hole to expose the touch sensing lines. Thesub-common electrodes are disposed on the fourth insulation layer, oneof the sub-common electrodes is electrically connected to one of thetouch sensing lines through the third contact hole, and one of the touchsensing lines is at least partially overlapped with one of the datalines along a normal vector of the in-cell touch display panel.

In some embodiments, a first metal layer is disposed on the firstsubstrate, in which the first metal layer includes a gate. A firstinsulation layer is disposed on the first metal layer, and asemiconductor layer is disposed on the first insulation layer. A secondmetal layer is disposed on the semiconductor layer, in which the secondmetal layer includes a source and a drain. A second insulation layer isdisposed on the second metal layer, and the second insulation layer hasa first contact hole to expose the drain. A third insulation layer isdisposed on the second insulation layer, the third insulation layer hasa second contact hole corresponding to the first contact hole, and thesub-common electrodes are disposed on the third insulation layer. Afourth insulation layer is disposed on the sub-common electrodes and hasa third contact hole and fourth contact hole, the third contact holecorresponds to the second contact hole, and the fourth contact holeexposes one of the sub-common electrodes. A third metal layer isdisposed on the fourth insulation layer, in which the touch sensinglines are formed by the third metal layer in the display area, and oneof the touch sensing lines is electrically connected to one of thesub-common electrodes through the fourth contact hole. A firsttransparent conductive layer includes the pixel electrodes and a touchsensing line protection layer, and disposed on the fourth insulationlayer, in which one of the pixel electrodes is electrically connected tothe drain through the third contact hole, the second contact hole andthe first contact hole. The touch sensing line protection layer coversone of the touch sensing lines, and the one of the touch sensing linesis at least partially overlapped with one of the data lines along anormal vector of the in-cell touch display panel.

In some embodiments, a semiconductor layer is disposed on the firstsubstrate, in which the semiconductor layer includes a source, a firstlightly doped region, a channel region of a thin film transistor, asecond lightly doped region, and a drain, in which the channel region isdisposed between the first lightly doped region and the second lightlydoped region. A first insulation layer is disposed on the semiconductorlayer, in which the first insulation layer has a first contact hole toexpose the source, and a second contact hole to expose the drain. Afirst metal layer is disposed on the first insulation layer, in whichthe first metal layer includes a gate. A second insulation layer isdisposed on the first metal layer, and the second insulation layer has athird contact hole corresponding to the first contact hole and a fourthcontact hole corresponding to the second contact hole and the pixelelectrodes are disposed on the second insulation layer. A second metallayer is disposed on the second insulation layer, in which the datalines are formed by the second metal layer in the display area, one ofthe data lines is electrically connected to the source through the thirdcontact hole and the first contact hole, in which the second metal layerincludes a filling structure which is electrically connected to one ofthe pixel electrodes and is electrically connected to the drain throughthe fourth contact hole and the second contact hole, and a thirdinsulation layer is formed on the second metal layer. A third metallayer is disposed on the third insulation layer, in which the touchsensing lines are formed by the third metal layer in the display area. Afourth insulation layer is disposed on the third metal layer, and thefourth insulation layer has a fifth contact hole to expose one of thetouch sensing lines. The sub-common electrodes are disposed on thefourth insulation layer, and one of the sub-common electrodes iselectrically connected to one of the touch sensing lines through thefifth contact hole, in which one of the touch sensing lines is at leastpartially overlapped with one of the data lines along a normal vector ofthe in-cell touch display panel.

In some embodiments, a semiconductor layer is disposed on the firstsubstrate, in which the semiconductor layer includes a source, a firstlightly doped region, a channel region of a thin film transistor, asecond lightly doped region, and a drain, in which the channel region isdisposed between the first lightly doped region and the second lightlydoped region. A first insulation layer is disposed on the semiconductorlayer, in which the first insulation layer has a first contact hole toexpose the source and a second contact hole to expose the drain. A firstmetal layer is disposed on the first insulation layer, in which thefirst metal layer includes a gate. A second insulation layer is disposedon the first metal layer, and the second insulation layer has a thirdcontact hole corresponding to the first contact hole, and a fourthcontact hole corresponding to the second contact hole. A second metallayer is disposed on the second insulation layer, in which the datalines are formed by the second metal layer in the display area, one ofthe data lines is electrically connected to the source through the thirdcontact hole and the first contact hole, in which the second metal layerincludes a filling structure which is electrically connected to thedrain through the fourth contact hole and the second contact hole. Athird insulation layer is disposed on the second metal layer, the thirdinsulation layer has a fifth contact hole to expose the fillingstructure, in which the sub-common electrodes are disposed on the thirdinsulation layer. A fourth insulation layer is disposed on thesub-common electrodes, and the fourth insulation layer has a sixthcontact hole corresponding to the fifth contact hole and a seventhcontact hole to expose one of the sub-common electrodes. A third metallayer is disposed on the third insulation layer, in which the touchsensing lines are formed by the third metal layer in the display area,one of the touch sensing lines is electrically connected to one of thesub-common electrodes through the seventh contact hole. A firsttransparent conductive layer includes the pixel electrodes and a touchsensing line protection layer, the pixel electrodes are disposed on thefourth insulation layer, and one of the pixel electrodes is electricallyconnected to the filling structure through the sixth contact hole andthe fifth contact hole. The touch sensing line protection layer coversthe touch sensing lines, and one of the touch sensing lines is at leastpartially overlapped with one of the data lines along a normal vector ofthe in-cell touch display panel.

In some embodiments, a first metal layer is disposed on the firstinsulation layer, in which the first metal layer includes a gate. Afirst insulation layer is disposed on the first metal layer. Asemiconductor layer is disposed on the first insulation layer, and thesemiconductor layer is metal oxide including indium, gallium and zinc. Asecond insulation layer is disposed on the semiconductor layer, thesecond insulation layer has a first contact hole and a second contacthole to expose the semiconductor layer, and the pixel electrodes aredisposed on the second insulation layer. A second metal layer isdisposed on the second insulation layer to form a source, a drain andthe data lines, in which the source and the drain are electricallyconnected to the second contact hole through the first contact hole andthe semiconductor layer respectively, in which the drain is electricallyconnected to one of the pixel electrodes, and a third insulation layeris disposed on the second metal layer. A third metal layer is disposedon the third insulation layer, in which the touch sensing lines areformed by the third metal layer in the display area, a fourth insulationlayer is disposed on the third metal layer, and the fourth insulationlayer has a third contact hole to expose one of the touch sensing lines.The sub-common electrodes are disposed on the fourth insulation layer,one of the sub-common electrodes is electrically connected to one of thetouch sensing lines through the third contact hole, and one of the touchsensing lines is at least partially overlapped with one of the datalines along a normal vector of the in-cell touch display panel.

In some embodiments, a first metal layer is disposed on the firstsubstrate, in which the first metal layer includes a gate. A firstinsulation layer is disposed on the first metal layer, a semiconductorlayer is disposed on the first insulation layer, and the semiconductorlayer is metal oxide including indium, gallium and zinc, in which asecond insulation layer is disposed on the semiconductor layer, and thesecond insulation layer has a first contact hole and a second contacthole to expose the semiconductor layer. A second metal layer is disposedon the second insulation layer to form a source, a drain and the touchsensing lines, in which the source and the drain are electricallyconnected to the semiconductor layer through the first contact hole andthe second contact hole respectively. A third insulation layer isdisposed on the second metal layer and has third contact hole to exposeone of the touch sensing lines and a fourth contact hole to expose thedrain. The pixel electrodes are disposed on the third insulation layer,one of the pixel electrodes is electrically connected to the drainthrough the fourth contact hole. A fourth insulation layer is disposedon the pixel electrodes, and the fourth insulation layer has a fifthcontact hole corresponding to the third contact hole to expose one ofthe touch sensing lines. The sub-common electrodes are disposed on thefourth insulation layer, in which one of the touch sensing lines iselectrically connected to one of the sub-common electrodes through thefifth contact hole and the third contact hole.

In some embodiments, one of the touch sensing lines includes a firstportion and a second portion, the first portion is formed by a firstmetal layer, the second portion is formed by a third metal layer, andthe in-cell touch display panel further includes a connection structuredisposed in the signal line transferring area and being electricallyconnected to the first portion and the second portion. The connectionstructure includes: the first portion disposed on the first substrate; afirst insulation layer having a first contact hole to expose the firstportion; a second insulation layer having a second contact holecorresponding to the first contact hole; the second portion disposed onthe second insulation layer; a fourth insulation layer having a thirdcontact hole and a fourth contact hole, in which a third contact holecorresponds to the second contact hole, and a fourth contact holeexposes the second portion; and a second transparent conductive layerbeing electrically connected to the second portion through the fourthcontact hole, and being electrically connected to the first portionthrough the first contact hole, the second contact hole, and the thirdcontact hole.

In some embodiments, one of the touch sensing lines includes a firstportion and a second portion, the first portion is formed by a firstmetal layer, the second portion is formed by a third metal layer, andthe in-cell touch display panel further includes a connection structuredisposed in the signal line transferring area and being electricallyconnected to the first portion and the second portion. The connectionstructure includes: the first portion disposed on the first substrate; afirst insulation layer disposed on a first metal layer and having afirst contact hole to expose the first portion; a metal electrode formedby a second metal layer, and being electrically connected to the firstportion through a first contact hole; a second insulation layer disposedon the second metal layer, and having a second contact hole to exposethe first portion; the second portion being electrically connected tothe first portion through the second contact hole; a third insulationlayer having a third contact hole to expose the second portion; and anelectric connecting portion formed by a second transparent conductivelayer and being electrically connected to the second portion through thethird contact hole.

In some embodiments, one of the touch sensing lines includes a firstportion and a second portion, the first portion is formed by a secondmetal layer, the second portion is formed by a third metal layer, andthe in-cell touch display panel further includes a connection structuredisposed in the signal line transferring area and being electricallyconnected to the first portion and the second portion. The connectionstructure includes: a first insulation layer disposed on the firstsubstrate; the first portion disposed on the first insulation layer; asecond insulation layer disposed on the first portion and having a firstcontact hole to expose the first portion; the second portion disposed ona second insulation layer; a fourth insulation layer having a secondcontact hole and a third contact hole, in which the second contact holecorresponds to the first contact hole, and the third contact holeexposes the second portion; and a second transparent conductive layerbeing electrically connected to the second portion through the thirdcontact hole, and being electrically connected to the first portionthrough the first contact hole and the second contact hole.

In some embodiments, one of the touch sensing lines includes a firstportion and a second portion, the first portion is formed by a secondmetal layer, the second portion is formed by a third metal layer, andthe in-cell touch display panel further includes a connection structuredisposed in the signal line transferring area and being electricallyconnected to the first portion and the second portion. The connectionstructure includes: a first insulation layer disposed on the firstsubstrate; the first portion disposed on the first insulation layer; asecond insulation layer disposed on the first portion and having a firstcontact hole to expose the first portion; the second portion disposed onthe second insulation layer and being electrically connected to thefirst portion through the first contact hole; a fourth insulation layerhaving a second contact hole to expose the second portion; and a secondtransparent conductive layer being electrically connected to the secondportion through the second contact hole.

In some embodiments, one of the touch sensing lines includes a firstportion and a second portion, the first portion and the second portionare formed by a third metal layer, and the in-cell touch display panelfurther includes a connection structure disposed in the signal linetransferring area and being electrically connected to the first portionand the second portion. The connection structure includes: a firstinsulation layer disposed on the first substrate; a second insulationlayer disposed on the first insulation layer; the first portion and thesecond portion disposed on the second insulation layer; a fourthinsulation layer disposed on the second insulation layer and having afirst contact hole to expose the first portion and a second contact holeto expose the second portion; and a second transparent conductive layerbeing electrically connected to the first portion through the firstcontact hole, and being electrically connected to the second portionthrough the second contact hole.

In some embodiments, one of the touch sensing lines includes a firstportion and a second portion, the first portion and the second portionare formed by a second metal layer, and the in-cell touch display panelfurther includes a connection structure disposed in the signal linetransferring area and being electrically connected to the first portionand the second portion. The connection structure includes: a firstinsulation layer disposed on the first substrate; the first portion andthe second portion disposed on the first insulation layer; a secondinsulation layer disposed on the first insulation layer, and having afirst contact hole to expose the first portion and a second contact holeto expose the second portion; and a first transparent conductive layerbeing electrically connected to the first portion through the firstcontact hole, and being electrically connected to the second portionthrough the second contact hole.

In some embodiments, one of the touch sensing lines includes a firstportion and a second portion, the first portion is formed by a firstmetal layer, the second portion is formed by a second metal layer, andthe in-cell touch display panel further includes a connection structuredisposed in the signal line transferring area and being electricallyconnected to the first portion and the second portion. The connectionstructure includes: a first insulation layer disposed on the firstsubstrate; the first portion disposed on the first insulation layer; asecond insulation layer disposed on the first portion, and having afirst contact hole to expose the first portion; the second portiondisposed on the second insulation layer; a third insulation layer havinga second contact hole and a third contact hole, in which the secondcontact hole corresponds to the first contact hole, and the thirdcontact hole exposes the second portion; and a first transparentconductive layer being electrically connected to the second portionthrough the third contact hole, and being electrically connected to thefirst portion through the first contact hole and the second contacthole.

In some embodiments, one of the data lines are parallel with one of thetouch sensing lines in the display area, and are not overlapped witheach other in the fan-out area.

In some embodiments, one of the data lines and one of the touch sensinglines are overlapped with each other in the display area along a normalvector of the in-cell touch display panel. The data lines and the touchsensing lines are formed by different metal layers in the display area.

In some embodiments, at least two of the touch sensing lines areelectrically connected to each other and are electrically connected toone of the touch pads through a conducting line in the fan-out area.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention can be more fully understood by reading the followingdetailed description of the embodiment, with reference made to theaccompanying drawings as follows.

FIG. 1 is a schematic diagram illustrating connections of data lines andtouch sensing lines in an in-cell touch display panel in accordance withan embodiment.

FIG. 2 is a schematic diagram illustrating connection between the touchsensing lines and the driving circuit in accordance with an embodiment.

FIG. 3A to FIG. 3G is a schematic diagram illustrating disposition ofdisplay pads and touch pads in accordance with some embodiments.

FIG. 4 is a top view of pixel structure in accordance with anembodiment.

FIG. 5A and FIG. 5B are cross-sectional views of pixel structure along across-sectional line AA′ of FIG. 4.

FIG. 5C and FIG. 5D are top views of multiple pixel structure inaccordance with another embodiment.

FIG. 5E is a circuit schematic diagram of the common electrodes of FIG.5C.

FIG. 5F is a cross-sectional view of pixel structure along across-sectional line EE′ of FIG. 5C.

FIG. 5G is a cross-sectional view of pixel structure along across-sectional line FF′ of FIG. 5C.

FIG. 5H is a cross-sectional view of pixel structure alongacross-sectional line GG′ of FIG. 5C.

FIG. 5I is a top view of pixel structure in accordance with anembodiment.

FIG. 5J is a cross-sectional view of the pixel structure along across-sectional line II′ of FIG. 5I.

FIG. 5K is a cross-sectional view of pixel structure along across-sectional line JJ′ of FIG. 5I.

FIG. 6 is a diagram illustrating a top view of pixel structure accordingto another embodiment.

FIG. 7A and FIG. 7B are diagrams illustrating cross-sectional views ofthe pixel structure along a cross-sectional line CC′ of FIG. 6.

FIG. 7C to FIG. 7G are cross-sectional views of pixel structure inaccordance with another embodiment.

FIG. 8A to FIG. 8C are diagrams illustrating cross-sectional views ofthe connection structure 440 along a cross-sectional line BB′ of FIG. 4.

FIG. 8D and FIG. 8E are cross-sectional views of the connectionstructure in accordance with another embodiment.

FIG. 9A to FIG. 9C are cross-sectional views of the connection structure610 along a cross-sectional line DD′ of FIG. 6.

FIG. 10A to FIG. 10G are top views of intermediary stages formanufacturing pixel stricture in accordance with an embodiment.

DETAILED DESCRIPTION

Specific embodiments of the present invention are further described indetail below with reference to the accompanying drawings, however, theembodiments described are not intended to limit the present inventionand it is not intended for the description of operation to limit theorder of implementation. Moreover, any device with equivalent functionsthat is produced from a structure formed by a recombination of elementsshall fall within the scope of the present invention. Additionally, thedrawings are only illustrative and are not drawn to actual size.

The using of “first”, “second”, “third”, etc. in the specificationshould be understood for identifying units or data described by the sameterminology but are not referred to particular order or sequence.

FIG. 1 is a schematic diagram illustrating connections of data lines andtouch sensing lines in an in-cell touch display panel in accordance withan embodiment. Referring to FIG. 1, in an in-cell touch display panel100, electrodes for detecting touch are disposed in pixel structures ona thin film transistor (TFT) substrate.

The in-cell touch display panel 100 has a display area 101 and anon-display area 102. The non-display area 102 includes a signal linetransferring area 103 and a fan-out area 104. The display area 101 isdescribed first. The display area 101 includes multiple pixel regionswhich are formed in area where the gate lines are intersected with thedata lines. Each pixel region has a pixel structure. To be specific, thedisplay area 101 includes: pixel structures P11-P14, P21-P24, P31-P34and P41-P44; gate lines G1-G4 extending along an X direction (alsoreferred to a first direction); data lines D1-D4 extending along a Ydirection (also referred to a second direction), in which the data linesD1-D4 are not connected to each other spatially; and touch sensing linesS1-S4 extending along the Y direction. The data lines D1-D4 areintersected with the gate lines G1-G4 on the first substrate, and apixel structure is disposed in one of the intersection areas. Each pixelstructure includes a thin film transistor (TFT). Each of the data linesD1-D4 is electrically connected to the source of the TFT in thecorresponding pixel structure, and each of the gate lines G1-G4 iselectrically connected to the gate of the TFT in the corresponding pixelstructure. For example, the pixel structure P11 includes a TFT T1 whichhas a gate T1G and a source T1S. The gate line G1 is electricallyconnected to the gate T1G, and the data line D1 is electricallyconnected to the source T1S. The display panel also includes a commonelectrode which is patterned to form touch electrodes C11, C12, C21 andC22 in the display area 101. Each touch electrode corresponds tomultiple pixel electrodes and is electrically connected to at least onetouch sensing line through a contact hole. For example, the pixelstructures P11-P14 correspond to the touch electrode C11 which iselectrically connected to the touch sensing line S1; the pixelstructures P21-P24 correspond to the touch electrode C12 which iselectrically connected to the touch sensing line S3; the pixelstructures P31-P34 corresponds to the touch electrode C21 which iselectrically connected to the touch sensing line S2; and the pixelstructures P44-P44 corresponds to the touch electrode C22 which iselectrically connected to the touch sensing line S4.

A period of a frame is at least divided into one or more display periodsand one or more touch sensing periods. During the display period, acommon voltage is applied to the touch electrodes C11, C12, C21, andC22, and the voltage on the gate lines G1-G4 are configured to turn onthe TFTs in the corresponding pixel structures sequentially, and thedriving circuit 110 transmits pixel data to the pixel electrodes in thecorresponding pixel structures through the data lines D1-D4 in order toset grey levels of pixels. During the touch sensing period, the touchelectrodes C11, C12, C21, and C22 are taken for detecting touchoperations performed on the in-cell touch display panel 100, and thedriving circuit 110 generates a touch sensing signal according to thevoltage variation on the touch electrodes C11, C12, C21, and C22.

The signal line transferring area 103 is located between the displayarea 101 and the fan-out area 104. In the signal line transferring area103, the data lines D1-D4 and the touch sensing lines S1-S4 may betransferred to other metal layers. For example, the touch sensing linesS1-S4 are in a third or second metal in the display area 101, but aretransferred to a first metal layer in the fan-out area 104. Multipleconnection structures are disposed in the signal line transferring area103 for transferring the touch sensing lines S1-S4 from the third orsecond metal layer to the first metal layer. The embodiment of theconnection structure would be described in detail below. In addition, aprotection circuit and a transparent or opaque conductive layer may bedisposed in the signal line transferring area 103 to prevent the in-celltouch display panel 100 from damage by static discharge. In someembodiments, the width of the signal line transferring area 103 isessentially equal to width of half pixel to one pixel, which is notlimited in the invention.

A driving circuit 110 is disposed in the non-display area 102 on thein-cell touch display panel 100. The driving circuit 110 is electricallyconnected to display pads 121-124 and touch pads 131-134 which aredisposed on the in-cell touch display panel 100. The display pads121-124 are electrically connected to the data lines D1-D4 respectivelyand the touch pads 131-134 are electrically connected to the touchsensing lines S1-S4 respectively. In particular, along the X direction,one of the display pads is disposed between two of the touch pads, andone of the touch pads is disposed between two of the display pads. Forexample, the display pad 122 is disposed between the touch pad 131 andthe touch pad 132, and the touch pad 131 is disposed between the displaypad 121 and the display pad 122. In the embodiment of FIG. 1, thedisplay pads 121-124 and the touch pads 131-134 are disposed in aninterleaved way. In prior art (not shown), the display pads and thetouch pads are arranged in a same row, and the display pads arecontinuously disposed, and then the touch pads are continuously disposednext to the display pad. Thus, the data lines D1-D4 would be overlappedwith the touch sensing lines S1-S4 in the non-display area 102. However,as shown in FIG. 1, the data lines D1-D4 are parallel with the touchsensing lines S1-S4 in the display area 101, and they do not overlapwith each other in the non-display area 102 because the display pads121-124 and the touch pads 131-134 are disposed in the interleaved way.

In some embodiments, the driving circuit 110 is disposed on a flexiblecircuit board such as a Tape Carrier Package (TCP) or a Chip on Film(COF). Alternatively, the driving circuit 110 may be disposed on thethin film transistor substrate. In addition, the driving circuit 110 maybe a Touch and Display Driver Integration (TDDI) single chip providingdisplay and touch functions simultaneously. Or, the driving circuit 110may include multiple chips which provide display function and touchfunction respectively. The driving circuit 110 may be a Gate-Driver InPlane (GIP) or an Integrated Gate Driver (IGD). Moreover, the number ofthe driving circuit 110 may be greater than one that are disposed at twosides (e.g. upper side and lower side, or left-hand side and right-handside) of the panel or disposed just one side of the panel.

Every four pixel structures share one touch electrode In FIG. 1, butmore or less pixel structures may share one common electrode in otherembodiments. In addition, the number of the data lines D1-D4 is equal tothe number of the touch sensing lines S1-S4 in FIG. 1, but in practice,every pixel structure (also referred to sub-pixel) generally renders asingle color, and a pixel is composed of three sub-pixels which aregenerally arranged along the X direction. Therefore, the resolution ofthe pixel structures along the X direction is greater than theresolution of that along the Y direction. In some embodiments, at leasttwo of the touch sensing lines are connected to each other and then iselectrically connected to one touch pad though a conductive line. Forexample, referring to FIG. 2, FIG. 2 is a schematic diagram illustratingconnection between the touch sensing lines and the driving circuit inaccordance with an embodiment. For simplification, conductive lines suchas the data lines and the gate lines are not shown in FIG. 2. In theembodiment of FIG. 2, each of the touch electrodes C11, C21, and C31includes 27 pixel structures arranged as 3 rows and 9 columns. At leastone of the touch sensing lines S1-S3 is electrically connected to thetouch electrode C11 through a contact hole ch, and the touch sensinglines S1-S3 are connected to each other in the signal line transferringarea 103, and then is electrically connected to one touch pad through aconductive line 201. At least one of the touch sensing lines S4-S6 iselectrically connected to the touch electrode C21 through the contacthole ch, and the touch sensing lines S4-S6 are connected to each otherin the signal line transferring area 103, and then they are electricallyconnected to one touch pad through a conductive line 202. At least oneof the touch sensing lines S7-S9 is electrically connected to the touchelectrode C31 through the contact hole ch, and the touch sensing linesS7-S9 are connected to each other in the signal line transferring area103, and then they are electrically connected to one touch pad through aconductive line 203. In the embodiment of FIG. 2, two of the touchsensing lines S1-S3 are electrically connected to the touch electrodeC11 through two contact holes ch, one of the touch sensing lines S4-S6is electrically connected to the touch electrode C21 through one contacthole ch, and three of the touch sensing lines S7-S9 are electricallyconnected to the touch electrode C31 through three contact holes ch. Thenumber of touch sensing lines that each touch electrode is electricallyconnected to is not limited in the invention. For example, if there arefive touch sensing lines passing through one touch electrode, then thetouch electrode may be electrically connected to any number (ex. 1˜5) ofthe five touch sensing lines.

In addition, each pixel structure has at least a data line, and eachdata line is connected to one display pad. In other words, the number ofthe display pads is more than the number of touch pads. In theembodiment of FIG. 2, one touch pad is disposed between every threedisplay pads, and thus the touch sensing lines and the data lines arenot overlapped with each other in the non-display area 102.

FIG. 3A to FIG. 3G is a schematic diagram illustrating disposition ofdisplay pads and touch pads in accordance with some embodiments. Forsimplification, the data lines and the touch sensing lines respectivelyconnected to display pads DP and touch pads TP are not shown in FIG. 3Ato FIG. 3G.

Referring to FIG. 3A, in some embodiments, the display pads and thetouch pads are arranged, along the Y direction, as a first row 301, asecond row 302, and a third row 303. The first row 301 only includes thetouch pads TP, and the second row 302 and the third row 303 only includethe display pads DP. In this embodiment, all touch pads are disposed inthe first row 301, but all touch pads may be arranged as several rows inother embodiments. In addition, the touch pads TP are disposed on thetop in FIG. 3A, that is, the touch pads TP are disposed between thedisplay area and the display pads DP. FIG. 3B is similar to FIG. 3A, inwhich the display pads and the touch pads are arranged, along the Ydirection, as a first row 311, a second row 312 and a third row 313. Thesecond row 312 and the third row 313 only include the display pads DP,and the first row 311 only includes the touch pads TP. However, thetouch pads TP are disposed on the bottom in FIG. 3B, that is, thedisplay pads DP are disposed between the display area and the touchpads.

In FIG. 3C, the display pads and the touch pads are arranged, along theY direction, as a first row 321 and a second row 322. The first row 321only includes a portion of the display pads DP, and the second row 322includes a portion of the display pad DP and the touch pads TP. Thetouch pads TP are inserted into the display pads DP of the second row322 in FIG. 3C. The first row 321 is disposed on the top, that is, thefirst row 321 is disposed between the display area and the second row322. FIG. 3D is similar to FIG. 3, but the difference between FIG. 3Cand FIG. 3D is that the second row 332 having the touch pads TP and thedisplay pads DP is disposed on the top, that is, the second row 332 isdisposed between the display area and the first row 331. The touch padsTP are inserted into the display pads DP of the second row 332 as shownin FIG. 3D.

In FIG. 3E, the display pads and the touch pads are arranged, along Ydirection, as a first row 341, a second row 342, a third row 343 and afourth row 344. The first row 341 only includes touch pads TP; thesecond row 342, the third row 343 and the fourth row 344 only includedisplay pads DP. Moreover, the touch pads TP are overlapped with thedisplay pads DP along Y direction.

In FIG. 3F, the touch pads TP are evenly distributed in the first row351, the second row 352 and the third row 353. In the same row, threedisplay pads DP are disposed between two adjacent touch pads TP. Inaddition, the touch pads TP are overlapped with each other along Ydirection.

In FIG. 3G, a first row 361 only includes touch pads TP, a second row362 and a third row 363 only include display pads DP, and a fourth row364 only includes touch pads TP. Along Y direction, the touch pads TP inthe first row 361 are overlapped with the touch pads TP in the fourthrow 364, and the display pads DP in the second row 362 are overlappedwith the display pads DP in the third row 363.

In the embodiments of FIG. 3A to FIG. 3G, the width of each touch pad TPalong the X direction is equal to that of each display pad DP. However,in other embodiments, the width of each touch pad TP along the Xdirection may be wider than that of the display pad DP, which is notlimited in the invention. Note that the description of “one display padis disposed between two touch pads along X direction” may be interpretedas “the projection of one display pad onto X axis is disposed betweenthe projections of two touch pads onto X axis”, and thus it encompassthe embodiments of FIG. 3A to FIG. 3G. For example, in FIG. 3E, thedisplay pads 347 is disposed between the touch pads 345 and the touchpads 346 along X direction, and the touch pads 346 is disposed betweenthe display pads 347 and the display pads 348. From another aspect, aprojection of the display pads 347 onto X axis is located between twoprojections of the touch pads 345 and the touch pads 346 onto X axis. Aprojection of the touch pads 346 onto X axis is between two projectionsof the display pads 347 and the display pads 348 along X axis. Thedescription may be applied to FIG. 3A to FIG. 3D, and FIG. 3F to FIG.3G, and the description will not be repeated.

FIG. 4 is a top view of pixel structure in accordance with anembodiment. FIG. 5A is a cross-sectional view of pixel structure along across-sectional line AA′ of FIG. 4. In the following description, thetouch electrode in each pixel structure is referred to as the sub-commonelectrode. That is, each pixel electrode corresponds to one sub-commonelectrode which serves as a portion of the touch electrode in the touchsensing period. Referring to FIG. 4, a pixel structure 410 is taken asan example. The pixel structure 410 includes a TFT 420, a pixelelectrode PE and a sub-common electrode COM (not shown in FIG. 4). TheTFT 420 includes a gate 420G, a source 420S and a drain 420D. A gateline 430 formed in a first metal layer M1 is connected to the gate 420G.A data line 431 formed in a second metal layer M2 is connected to thesource 420S. A touch sensing line 432 formed in a third metal layer M3is connected to the sub-common electrode COM. Referring to FIG. 4 andFIG. 5A, the first metal layer M1 is formed on a substrate SUB, and thefirst metal layer M1 includes the gate 420G. A first insulation layerINS1 (also referred to gate insulation layer) is formed on the firstmetal layer M1. A semiconductor layer 420C is formed on the firstinsulation layer INS1 as a channel region of the TFT 420. The secondmetal layer M2 is formed on the semiconductor layer 420C. The secondmetal layer M2 includes a source 420S and a drain 420D. A secondinsulation layer INS2 is formed on the second metal layer M2, and has afirst contact hole 5A_1h. A third insulation layer INS3 is formed on thesecond insulation layer INS2, and the third insulation layer INS3 has asecond contact hole 5A_2h corresponding to the first contact hole 5A_1h.A third metal layer M3 is formed on the third insulation layer INS3. Thetouch sensing lines 432 are formed by the third metal layer M3 in thedisplay area 101. A first transparent conductive layer 511 is alsoformed on the third insulation layer INS3. The first transparentconductive layer 511 includes a pixel electrode PE which is electricallyconnected to the drain 420D through the second contact hole 5A_2h andthe first contact hole 5A_1h. A fourth insulation layer INS4 is formedon the third metal layer M3 and the first transparent conductive layer511, and has a third contact hole 5A_3h to expose the touch sensinglines 432. A second transparent conductive layer 512 is formed on thefourth insulation layer INS4, and includes a sub-common electrode COMwhich has at least one slits 512S. In the display area 101, the touchsensing line 432 is electrically connected to the sub-common electrodeCOM through the contact hole 5A_3h. Consequently, the common voltage isapplied to the sub-common electrode COM in the display period, and anelectric field between the sub-common electrode COM and the pixelelectrode PE is configured to control the orientation of the liquidcrystal. In the touch sensing period, the sub-common electrode COMserves as a portion of the touch electrode, and the voltage on which istransmitted to the driving circuit through the touch sensing line 432 togenerate the touch sensing signal.

There are four insulation layers in the embodiment of FIG. 5A, in whichthe first insulation layer INS1, the second insulation layer INS2, andthe fourth insulation layer INS4 may be formed by silicon nitride,silicon oxide or other suitable insulation layer; and the thirdinsulation layer INS3 may be an organic insulation layer. However, theinvention is not limited thereto, the first insulation layer INS1 to thefourth insulation layer INS4 may be formed by any suitable material. Inaddition, the thickness of the third insulation layer INS3 may begreater than or equal to the thickness of the second insulation layerINS2. The thickness of the third insulation layer INS3 is 1.2 or moretimes of the thickness of the fourth insulation layer INS4, and thus theelectric field between the sub-common electrode COM and the pixelelectrode PE may not be interfered badly. Moreover, the thickness of thethird insulation layer INS3 is greater than or equal to 5000 Å so thatthe third insulation layer INS3 can achieve better planarization. Thesum of the thickness of the third insulation layer INS3 and thethickness of the fourth insulation layer INS4 is greater than or equalto 7000 Å. If the fourth insulation layer INS4 is too thick, theelectric field effect would not be ideal.

The sub-common electrode COM is above the pixel electrode PE in theembodiment of FIG. 5A. However, the sub-common electrode COM may bebelow the pixel electrode PE in other embodiments. For example,referring to FIG. 5B, the second insulation layer INS2 is formed on thesecond metal layer M2, and the second insulation layer INS2 has a firstcontact hole 5E_1h. The third metal layer M3 is formed on the secondinsulation layer INS2. The touch sensing lines 432 are formed by thethird metal layer M3 in the display area 101. The third insulation layerINS3 is formed on the second insulation layer INS2. The third insulationlayer INS3 has a second contact hole 5E_2h to expose the touch sensinglines 432. The third insulation layer INS3 has a third contact hole5E_3h corresponding to the first contact hole 5E_1h. The firsttransparent conductive layer 511 is formed on the third insulation layerINS3. The first transparent conductive layer 511 includes the sub-commonelectrode COM which is electrically connected to the touch sensing lines432 through the second contact hole 5E_2h. The fourth insulation layerINS4 is formed on the transparent conductive layer 511, and has a fourthcontact hole 5E_4h corresponding to the third contact hole 5E_3h. Thesecond transparent conductive layer 512 is formed on the fourthinsulation layer INS4. The second transparent conductive layer 512includes the pixel electrode PE which has at least one slits 512S. Thepixel electrode PE is electrically connected to the drain 420D throughthe fourth contact hole 5E_4h, the third contact hole 5E_3h and thefirst contact hole 5E_1h.

In some embodiments, the sub-common electrode COM and the second metallayer M2 are formed in the same layer. For example, referring to FIG. 5Cand FIG. 5E, FIG. 5C illustrates two pixel structure in an area 540 ofFIG. 5E. In order to distinguish two sub-common electrodes COM of FIG.5E, the sub-common electrodes in two adjacent pixel structures of FIG.5C are labeled as a first sub-common electrode COM1 and a secondsub-common electrode COM2. When the sub-common electrodes COM1, COM2 aredisposed below the pixel electrode PE, the sub-common electrodes COM1,COM2 and the second metal layer M2 are formed directly on the same layer(the first insulation layer INS1), that is, the sub-common electrodesCOM1, COM2 and the second metal layer M2 are in direct contact with thefirst insulation layer INS1. Consequently, the sub-common electrode COM1cannot across the data lines 431 to electrically connect the sub-commonelectrode COM2. Therefore, multiple metal connection structures (e.g.metal connection structure 535) are disposed for electrically connectingthe sub-common electrodes in two adjacent pixel structures. In addition,the metal connection structures are not formed in the second metallayer. In the embodiment of FIG. 5C, the metal connection structures areformed in the third metal layer M3.

Referring to FIG. 5D, the sub-common electrodes COM1 and COM2 areelectrically connected to each other through a metal connectionstructure 535 along the X direction. However, the sub-common electrodeswould not across the second metal layer in the same layer along the Ydirection, and thus the sub-common electrodes are electrically connectedto each other through an extending portion. In detail, the sub-commonelectrode COM1 and a sub-common electrode COM3, which are adjacent toeach other along Y direction, are electrically connected to each otherthrough an extending portion 591; the sub-common electrode COM2 and asub-common electrode COM4, which are adjacent to each other along Ydirection, are electrically connected to each other through an extendingportion 592. The extending portions 591, 592 would across the gate lines430, and the width of the extending portion along X direction is lessthan that of the sub-common electrodes COM1, COM2, COM3, and COM4.

Referring to FIG. 5C, FIG. 5F, FIG. 5G and FIG. 5H, FIG. 5F is across-sectional view of pixel structure along a cross-sectional line EE′of FIG. 5C, FIG. 5G is a cross-sectional view of pixel structure along across-sectional line FF′ of FIG. 5C, and FIG. 5G is a cross-sectionalview of pixel structure along across-sectional line GG′ of FIG. 5C. Theunits of FIG. 5F to FIG. 5G that are similar to that of FIG. 5A will notbe described again. In FIG. 5F to FIG. 5G, the second metal layer M2 andthe first transparent conductive layer 511 are both disposed on thefirst insulation layer INS1 and are in direct contact with the firstinsulation layer INS1. The first transparent conductive layer 511includes the sub-common electrodes COM1, COM2. The second insulationlayer INS2 is formed on the second metal layer M2 and the firsttransparent conductive layer 511. The second insulation layer INS2includes a contact hole 530, a contact hole 531 and a contact hole 534.The contact hole 531 exposes the drain 420D. The contact holes 530, 534which are in a single pixel structure are disposed at two sides of thesub-common electrode to expose the sub-common electrode of the pixelstructure. For example, the contact holes 530, 534 are disposed at twosides of the sub-common electrode COM1, COM2. The third metal layer M3is formed on the second insulation layer INS2. In the display area 101,the touch sensing line 432 is formed by the third metal layer M3. Thetouch sensing line 432 is electrically connected to the sub-commonelectrode COM1, COM2 through the contact hole 530. In addition, thethird metal layer M3 also includes the metal connection structure 535which is electrically connected to the touch sensing line 432 (alsoelectrically connected to the sub-common electrode COM1), and extends tothe contact hole 534 in the adjacent pixel structure from the contacthole 530, and is electrically connected to the sub-common electrode COM2through the contact hole 534. As a result, two adjacent sub-commonelectrodes COM1, COM2 are electrically connected to each other throughthe metal connection structure 535. Moreover, the third insulation layerINS3 is formed on the second insulation layer INS2 and the third metallayer M3, and the third insulation layer INS3 has a contact hole 532corresponding to the contact hole 531. The second transparent conductivelayer 512 is formed on the third insulation layer INS3, and has thepixel electrode PE. In some embodiments, the pixel electrode PE has atleast one slits 533. In addition, the pixel electrode PE is electricallyconnected to the drain 420D through the contact holes 532, 531.

In the embodiment of FIG. 5C, the metal connection structure 535 isformed by the third metal layer M3, but it may be formed by the firstmetal layer M1 in other embodiments. For example, referring to FIG. 5I,FIG. 5J and FIG. 5K. FIG. 5J is a cross-sectional view of the pixelstructure along a cross-sectional line II′ of FIG. 5I. FIG. 5K is across-sectional view of pixel structure along a cross-sectional line JJ′of FIG. 5I. FIG. In the embodiment, the first metal layer M1 includesthe gate 420G and a metal connection structure 563. The first insulationlayer INS1 includes contact holes 561, 562 to expose the metalconnection structure 563. The first transparent conductive layer 511includes the sub-common electrodes COM1, COM2. The sub-common electrodeCOM1 is electrically connected to the metal connection structure 563through the contact hole 561. The metal connection structure 563 iselectrically connected to the sub-common electrode COM2 through thecontact hole 562. As a result, the sub-common electrodes COM1, COM2 areelectrically connected to each other. The second insulation layer INS2is formed on the second metal layer M2 and the first transparentconductive layer 511, and has a contact hole 564 to expose thesub-common electrodes COM1, COM2. The third metal layer M3 is formed onthe second insulation layer INS2, and the touch sensing line 432 formedby the third metal layer M3 is electrically connected to the sub-commonelectrodes COM1, COM2 through the contact hole 564.

In the embodiment of FIG. 4, FIG. 5A and FIG. 5B, the data line 431 andthe touch sensing line 432 are not overlapped with each other along anormal vector of the in-cell touch display panel, but the touch sensingline 432 is made of metal that would decrease the aperture ratio of thepixel structure. In some embodiments, the data line 431 and the touchsensing line 432 are partially overlapped with each other along thenormal vector of the in-cell touch display panel, and the data line 431and the touch sensing line 432 are formed in different metal layers inthe display area. For example, referring to FIG. 6 and FIG. 7A, FIG. 6is a diagram illustrating a top view of pixel structure according toanother embodiment, and FIG. 7A is a diagram illustrating across-sectional view of the pixel structure along a cross-sectional lineCC′ of FIG. 6. The first metal layer M1 is formed on the substrate SUB,and the first metal layer M1 includes the gate 420G. The firstinsulation layer INS1 is formed on the first metal layer M1. Thesemiconductor layer 420C is formed on the first insulation layer INS1 asthe channel region of the TFT 420. The second metal layer M2 is formedon the semiconductor layer 420C, and includes the source 420S and thedrain 420D. The second insulation layer INS2 is formed on the secondmetal layer M2. The second insulation layer INS2 includes a firstcontact hole 7A_1h to expose the drain 420D. The third insulation layerINS3 is formed on the second insulation layer INS2, and includes asecond contact hole 7A_2h corresponding to the first contact hole 7A_1h.The first transparent conductive layer 511 is formed on the thirdinsulation layer INS3. The second transparent conductive layer 511includes the pixel electrode PE which is electrically connected to thedrain 420D through the second contact hole 7A_2h and the first contacthole 7A_1h. The third metal layer M3 is formed on the third insulationlayer INS3. The touch sensing line 432 is formed by the third metallayer M3 in the display area 101. The fourth insulation layer INS4 isformed on the third metal layer M3, and includes a third contact hole7A_3h to expose the touch sensing line 432. The second transparentconductive layer 512 is formed on the fourth insulation layer INS4. Thesecond transparent conductive layer 512 includes the sub-commonelectrode COM having at least one slits 512S. In the display area 101,the touch sensing line 432 is electrically connected to the sub-commonelectrode COM through the third contact hole 7A_3h. In particular, thetouch sensing line 432 is at least partially overlapped with the dataline 431 along a normal vector 720 of the display panel.

The sub-common electrode COM is formed above the pixel electrode PE inthe embodiment of FIG. 7A, but the sub-common electrode COM may beformed below the pixel electrode PE in other embodiments. For example,referring to FIG. 7B, the second insulation layer INS2 has a firstcontact hole 7C_1h to expose the drain 420D. The third insulation layerINS3 is formed on the second insulation layer INS2, and includes asecond contact hole 7C_2h corresponding to the third insulation layerINS3. The first transparent conductive layer 511 is formed on the thirdinsulation layer INS3, and includes the sub-common electrode COM. Thefourth insulation layer INS4 is formed on the first transparentconductive layer 511, and has a third contact hole 7C_3h correspondingto the second contact hole 7C_2h and a fourth contact hole 7C_4h toexpose the sub-common electrode COM. The third metal layer M3 is formedon the fourth insulation layer INS4. The touch sensing line 432 isformed by the third metal layer M3 in the display area 101. The touchsensing line 432 is at least partially overlapped with the data lines431 along the normal vector 720 of the in-cell touch display panel. Thesecond transparent conductive layer 512 is formed on the fourthinsulation layer INS4 and the third metal layer M3. The secondtransparent conductive layer 512 includes the pixel electrode PE havingat least one slits 512S. The pixel electrode PE is electricallyconnected to the drain 420D through the third contact hole 7C_3h, thesecond contact hole 7C_2h and the first contact hole 7C_1h. In addition,the second transparent conductive layer 512 further includes a touchsensing line protection layer 710 to cover the touch sensing lines 432.Note that the touch sensing line protection layer 710 is electricallyinsulated from the pixel electrode PE. The touch sensing line protectionlayer 710 is configured to protect the touch sensing lines 432 from theerosion of subsequent processes.

The channel of the thin film transistor is amorphous silicon in theaforementioned embodiments, but the channel of the thin film transistormay be polysilicon in other embodiments. For example, referring to FIG.7C, the semiconductor layer 520 is formed on the first substrate SUB.The semiconductor layer 520 includes a source 520S, a first lightlydoped region (lightly doped drain, LDD) 520L_1, a second lightly dopedregion 520L_2, a channel region 520C, and the drain 520D. The channelregion 520C is made of polysilicon formed by low temperature process(generally lower than 600° C.). The source 520S and the drain 520D areheavily doped. The channel region 520C is formed between the firstlightly doped region 520L_1 and the second lightly doped region 520L_2.The first lightly doped region 520L_1 is formed between the source 520Sand the channel region 520C. The second lightly doped region 520L_2 isformed between the channel region 520C and the drain 520D. The firstinsulation layer INS1 is formed on the semiconductor layer 520, and hasa first contact hole 5G_1h and a second contact hole 5G_2h to expose thesource 520S and the drain 520D respectively. The first metal layer M1 isformed on the first insulation layer INS1. The first metal layer M1 hasa gate 521G which is at least partially overlapped with the channelregion 520C along the normal vector 720 of the first substrate SUB. Thesecond insulation layer INS2 is formed on the first insulation layerINS1, and has a third contact hole 5G_3h corresponding to the firstcontact hole 5G_1h and a fourth contact hole 5G_4h corresponding to thesecond contact hole 5G_2h. The gate 521G is located between the thirdcontact hole 5G_3h and the fourth contact hole 5G_4h. The firsttransparent conductive layer 511 is formed on the second insulationlayer INS2, and includes the pixel electrode PE. The second metal layerM2 is formed on the second insulation layer INS2. The data line 431 isformed by the second metal layer M2. The data line 431 is electricallyconnected to the source 520S through the third contact hole 5G_3h andthe first contact hole 5G_1h. The second metal layer M2 also includes afilling structure 530 which is electrically connected to the pixelelectrode PE, and is electrically connected to the drain 520D throughthe fourth contact hole 5G_4h and the second contact hole 5G_2h. Thethird insulation layer INS3 is formed on the second metal layer M2. Thethird metal layer M3 is formed on the third insulation layer INS3. Thetouch sensing line 432 is formed by the third metal layer M3 in thedisplay area. The fourth insulation layer INS4 is formed on the thirdmetal layer M3. The fourth insulation layer INS4 has a fifth contacthole 5G_5J to expose the touch sensing line 432. The second transparentconductive layer 512 is formed on the fourth insulation layer INS4, andis electrically connected to the touch sensing line 432 through thefifth contact hole 5G_5J. The second transparent conductive layer 512includes the sub-common electrode COM having at least one slits 512S.The touch sensing line 432 is at least partially overlapped with thedata line 431 along the normal vector of the first substrate SUB.

The second metal layer M2 is formed above the first transparentconductive layer 511 in the embodiment of FIG. 7C. However, the secondmetal layer M2 may be formed below the first transparent conductivelayer 511 in other embodiments. For example, referring to FIG. 7D, theunits of FIG. 7D that is similar to FIG. 7C will not be described again.In FIG. 7D, the third insulation layer INS3 has a sixth contact hole5G_6h to expose the filling structure 530. The first transparentconductive layer 511 is formed on the third insulation layer INS3, andis electrically connected to the filling structure 530 through the sixthcontact hole 5G_6h.

The sub-common electrode COM is formed above the pixel electrode PE inthe embodiments of FIG. 7C and FIG. 7D, but the sub-common electrode COMmay be formed below the pixel electrode PE in other embodiments. Forexample, referring to FIG. 7E, the units of FIG. 7E that is similar toFIG. 7C will not be described again. In the embodiment of FIG. 7E, thethird insulation layer INS3 has a fifth contact hole 7F_5J to expose thefilling structure 530. The first transparent conductive layer 511 isformed on the third insulation layer INS3, and includes the sub-commonelectrode COM. The fourth insulation layer INS4 is formed on the firsttransparent conductive layer 511, and has a sixth contact hole 7F_6h anda seventh contact hole 7F_7h. The sixth contact hole 7F_6h correspondsto the fifth contact hole 7F_5J. The seventh contact hole 7F_7h exposesa portion of the first transparent conductive layer 511. The third metallayer M3 is formed on the fourth insulation layer INS4. The touchsensing lines 432 is formed by the third metal layer M3 in the displayarea. The touch sensing lines 432 is electrically connected to the firsttransparent conductive layer 511 through the seventh contact hole 7F_7h.The second transparent conductive layer 512 is formed on the fourthinsulation layer INS4, and includes the pixel electrode PE and the touchsensing line protection layer 710. The touch sensing line protectionlayer 710 covers the touch sensing line 432. The pixel electrode PE iselectrically connected to the filling structure 530 through the sixthcontact hole 7F_6h and the seventh contact hole 7F_7h. The touch sensingline 432 is at least partially overlapped with the data line 431 alongthe normal vector 720 of the first substrate SUB.

In some embodiments, the channel of the thin film transistor is made ofmetal oxide such as indium gallium zinc oxide (IGZO). For example,referring to FIG. 7F, the first metal layer M1 is formed on the firstsubstrate SUB. The first metal layer M1 includes the gate 420G of thethin film transistor. The first insulation layer INS1 is formed on thefirst metal layer M1. The semiconductor layer 420C is formed on thefirst insulation layer INS1. The semiconductor layer 420C includes metaloxide including indium, gallium, and zinc. The second insulation layerINS2 is formed on the semiconductor layer 420C, and has a first contacthole 5K_1h and a second contact hole 5K_2h to expose the semiconductorlayer 420C. The second metal layer M2 is also formed on the secondinsulation layer INS2. The second metal layer M2 includes the data line431, the source 420S, the drain 420D, and the touch sensing line 432.The source 420S (i.e. data line 431) is electrically connected to thesemiconductor layer 420C through the first contact hole 5K_1h. The drain420D is electrically connected to the semiconductor layer 420C throughthe second contact hole 5K_2h. The third insulation layer INS3 is formedon the second metal layer M2, and has a third contact hole 5K_3h toexpose the touch sensing line 432 and a fourth contact hole 5K_4h toexpose the drain 420D. The first transparent conductive layer 511 isformed on the third insulation layer INS3, and includes the pixelelectrode PE which is electrically connected to the drain 420D throughthe fourth contact hole 5K_4h. The fourth insulation layer INS4 isformed on the third insulation layer INS3, and has a fifth contact hole5K_5J corresponding to the third contact hole 5K_3h. The secondtransparent conductive layer 512 is formed on the third insulation layerINS4, and includes the sub-common electrode COM which is electricallyconnected to the touch sensing line 432 through the fifth contact hole5K_5J and the third contact hole 5K_3h.

The sub-common electrode COM is formed above the pixel electrode PE inthe embodiment of FIG. 7F, but the sub-common electrode COM may beformed below the pixel electrode PE in other embodiments. For example,referring to FIG. 7G, the units of FIG. 7G that is similar to FIG. 7Fwill not be described again. In FIG. 7G, the pixel electrode PE isformed on the second insulation layer INS2. The second metal layer M2 isformed on the second insulation layer INS2 to form the source 420S, thedrain 420D, and the data line 431. The source 420S and the drain 420Dare electrically connected to the semiconductor layer 420C through thefirst contact hole 5K_1h and the second contact hole 5K_2h respectively.The drain 420D is electrically connected to the pixel electrode PE. Thethird insulation layer INS3 is formed on the second metal layer M2. Thethird metal layer M3 is formed on the third insulation layer INS3. Thetouch sensing line 432 is formed by the third metal layer M3 in thedisplay area. The fourth insulation layer INS4 is formed on the thirdmetal layer M3, and has a third contact hole 7G _3h to expose the touchsensing line 432. The sub-common electrode COM is formed on the fourthinsulation layer INS4. The sub-common electrode COM is electricallyconnected to the touch sensing line 432 through the third contact hole7G_3h. The touch sensing line 432 is at least partially overlapped withthe data line 431 along the normal vector 720 of the in-cell touchdisplay panel.

Referring to FIG. 4, the touch sensing line 432 includes a first portion441 and a second portion 442. The second portion 442 is formed by thethird metal layer M3, but the first portion 441 may be formed by thefirst metal layer, the second metal layer or the third metal layer. Aconnection structure 440 is disposed in the signal line transferringarea 103 for electrically connecting the first portion 441 to the secondportion 442. Multiple embodiments are provided below.

FIG. 8A is a diagram illustrating a cross-sectional view of theconnection structure 440 along a cross-sectional line BB′ of FIG. 4. Thefirst portion 441 is formed in the first metal layer M1 in theembodiment of FIG. 8A. To be specific, the first portion 441 is formedon the substrate SUB. The first insulation layer INS1 is formed on thefirst metal layer M1, and includes a first contact hole 8A_1h to exposethe first portion 441. The second insulation layer INS2 is formed on thefirst insulation layer INS1, and includes a second contact hole 8A_2hwhich is corresponding to the first contact hole 8A_1h. The secondportion 442 is formed on the second insulation layer INS2. The fourthinsulation layer INS4 is formed on the third metal layer M3 and thesecond insulation layer INS2, and includes a third contact hole 8A_3hand a fourth contact hole 8A_4h. The third contact hole 8A_3h iscorresponding to the second contact hole 8A_2h, and the fourth contacthole 8A_4h exposes the second portion 442. The second transparentconductive layer 512 is formed on the fourth insulation layer INS4, andis electrically connected to the second portion 442 through the fourthcontact hole 8A_4h, and is electrically connected to the first portion441 through the first contact hole 8A_1h, the second contact hole 8A_1hand the third contact hole 8A_3h. As a result, the first portion 441 iselectrically connected to the second portion 442.

FIG. 8B is a diagram illustrating a cross-sectional view of theconnection structure 440 along a cross-sectional line BB′ of FIG. 4. Inthe embodiment of FIG. 8B, the first portion 441 is formed in the secondmetal layer M2. To be specific, the first insulation layer INS1 isformed on the substrate SUB. The first portion 441 is formed on thefirst insulation layer INS1. The second insulation layer INS2 includes afirst contact hole 8B_1h to expose the first portion 441. The secondportion 442 is formed on the second insulation layer INS2. The fourthinsulation layer INS4 is formed on the third metal layer M3, andincludes a second contact hole 8B_2h and a third contact hole 8B_3h. Thesecond contact hole 8B_2h corresponds to the first contact hole 8B_1h.The third contact hole 8B_3h exposes the second portion 442. The secondtransparent conductive layer 512 is electrically connected to the secondportion 442 through the third contact hole 8B_3h, and is electricallyconnected to the first portion 441 through the first contact hole 8B_1hand the second contact hole 8B_2h.

FIG. 8C is a diagram illustrating a cross-sectional view of theconnection structure 440 along a cross-sectional line BB′ of FIG. 4. Inthe embodiment of FIG. 8C, the first portion 441 is formed in the thirdmetal layer M3. To be specific, the first portion 441 and the secondportion 442 are formed on the second insulation layer INS2. The fourthinsulation layer INS4 includes a first contact hole 8C_1h to expose thefirst portion 441, and a second contact hole 8C_2h to expose the secondportion 442. The second transparent conductive layer 512 is electricallyconnected to the first portion 441 through the first contact hole 8C_1h,and is electrically connected to the second portion 442 through thesecond contact hole 8C_2h.

Referring to FIG. 4, the data line 431 has a first portion 461 and asecond portion 462. A connection structure 450 is electrically connectedto the first portion 461 and the second portion 462. The second portion462 is formed by the second metal layer, and the first portion 461 isformed by the first metal layer or the second metal layer. For example,referring to FIG. 8D, the first insulation layer INS1 is formed on thefirst substrate SUB. The second metal layer M2 is formed on the firstinsulation layer INS1, and includes the first portion 461 and the secondportion 462. The second insulation layer INS2 is formed on the secondmetal layer M2, and includes a first contact hole 8E_1 to expose thefirst portion 461 and a second contact hole 8E_2h to expose the secondportion 462. The second transparent conductive layer 512 is formed onthe second insulation layer INS2, and is electrically connected to thefirst portion 461 through the first contact hole 8E_1, and iselectrically connected to the second portion 462 through the secondcontact hole 8E_2h.

On the other hand, the embodiment of FIG. 8E may be applied to theembodiments of FIG. 7C to FIG. 7E. To be specific, the first insulationlayer INS1 is formed on the first substrate SUB. The first metal layerM1 includes the first portion 461, and is formed on the first insulationlayer INS1. The second insulation layer INS2 is formed on the firstmetal layer M1, and has a first contact hole 8H_1h to expose the firstportion 461. The second metal layer M2 includes the second portion 462,and is formed on the second insulation layer INS2. The third insulationlayer INS3 is formed on the second metal layer M2, and has a secondcontact hole 8H_2h corresponding to the first contact hole 8H_1h and athird contact hole 8H_3h to expose the second portion 462. The secondtransparent conductive layer 512 is formed on the third insulation layerINS3, and is electrically connected to the first portion 461 through thesecond contact hole 8H_2h and the first contact hole 8H_1h, and iselectrically connected to the second portion 462 through the thirdcontact hole 8H_3h.

The embodiments of FIG. 8A to FIG. 8D may be applied to the examples ofFIG. 5A and FIG. 5B, in which the third insulation layer INS3 is notformed in FIG. 8A to FIG. 8D because the third insulation layer INS3 isan organic insulation layer in some embodiments. The thickness of theorganic insulation layer is generally large, and thus the thirdinsulation layer INS3 is not formed in the connection structure to avoiddeep contact hole.

Referring to FIG. 4, in some embodiments, the data line 431 istransferred to the first metal layer or the third metal layer, orremains in the second metal layer by a connection structure 450. Theconnection structure 450 is similar to the connection structure 440, andboth of them electrically connect different metal layers through atransparent conductive layer. However, people in the art should be ableto implement the connection structure 450 according to the disclosure inFIG. 8A to FIG. 8C. On the other hand, in the embodiment of FIG. 8C,although both of the first part 441 and the second part 442 are formedin the third metal layer M3, the disposition of the connection structure440 can achieve the impedance matching between the touch sensing line432 and the data line 431.

Referring to FIG. 6, in the embodiment of FIG. 6, the touch sensing line432 has a first portion 611 and a second portion 612. The second portion612 is formed by the third metal layer, but the first portion 611 isformed by the first metal layer, second metal layer, or the third metallayer. The connection structure 610 is disposed in the non-display area102 for electrically connecting the first portion 611 and the secondportion 612. Multiple embodiments will be provided to describe theconnection structure 610.

Referring to FIG. 6 and FIG. 9A, FIG. 9A is a cross-sectional view ofthe connection structure 610 along a cross-sectional line DD′ of FIG. 6.In the embodiment of FIG. 9A, the first portion 611 is formed by thefirst metal layer M1. To be specific, the first portion 611 of the firstmetal layer M1 is formed on the first substrate SUB. The firstinsulation layer INS1 is formed on the first metal layer M1, and has afirst contact hole 9A_1h to expose the first portion 611. A metalelectrode 901 formed by the second metal layer M2 is electricallyconnected to the first portion 611 through the first contact hole 9A_1h.The metal electrode 901 is not electrically connected to the data lines,the source, or the drain of the second metal layer M2. The secondinsulation layer INS2 is formed on the metal electrode 901. The secondinsulation layer INS2 has a second contact hole 9A_2h to expose themetal electrode 901. The second portion 612 of the third metal layer M3is formed on the second insulation layer INS2, and is electricallyconnected to the metal electrode 901 through the second contact hole9A_2h. The fourth insulation layer INS4 is formed on the third metallayer M3. The fourth insulation layer INS4 has a third contact hole9A_3h to expose the second portion 612. An electric connecting portion912, which is formed by the second transparent conductive layer 512, iselectrically connected to the second portion 612 through the thirdcontact hole 9A_3h. The electric connecting portion 912 is notelectrically connected to the pixel electrode or the sub-commonelectrode in the same second transparent conductive layer 512. As aresult, the second portion 612 is electrically connected to the firstportion 611 through the metal electrode 901. The function of the metalelectrode 901 is to avoid deep contact hole configured in the connectionstructure 610, and the electric connecting portion 912 is configured toprevent the second portion 612 from the erosion of subsequent processes.

Referring to FIG. 6 and FIG. 9B, in the embodiment of FIG. 9B, the firstportion 611 is formed by the second metal layer M2. To be specific, thefirst insulation layer INS1 is formed on the first substrate SUB. Thefirst portion 611 is formed on the first insulation layer INS1. Thesecond insulation layer INS2 has a first contact hole 96_1h to exposethe first portion 611. The second portion 612 is formed on the secondinsulation layer INS2, and is electrically connected to the firstportion 611 through the first contact hole 9B_1h. The fourth insulationlayer INS4 has a second contact hole 9B_2h to expose the second portion612. An electric connecting portion 921, which is formed by the secondtransparent conductive layer 512, is electrically connected to thesecond portion 612 through the second contact hole 96_2h. The electricconnecting portion 921 is not electrically connected to the pixelelectrode or the sub-common electrode in the same second transparentconductive layer 512. The electric connecting portion 921 is configuredto prevent the second portion 612 from the erosion of subsequentprocesses.

Referring to FIG. 6 and FIG. 9C, in the embodiment of FIG. 9C, the firstportion 611 and the second portion 612 are both formed by the thirdmetal layer M3. As shown in FIG. 9C, the first insulation layer INS1,the second insulation layer INS2, the third metal layer M3, and thesecond transparent conductive layer 512 are sequentially formed on thefirst substrate SUB. The second transparent conductive layer 512 isconfigured to prevent the third metal layer M3 form the erosion ofsubsequent processes.

In the embodiment of FIG. 6, a connection structure 620 is disposed onthe data line 431 for transferring data line 431 to the first metallayer M1 or the third metal layer M3, or keep in the second metal layerM2. People in the related art should be able to design the connectionstructure 620 based on the description of the connection structure 610.The data line 431 and the touch sensing line 432 are in different metallayers after the transferring of the connection structures 610 and 620.

Referring to FIG. 4 and FIG. 6, the connection structure 440 is used inFIG. 4, and the connection structure 610 is used in FIG. 6 in theembodiments described above, but the invention is not limited thereto.The connection structure 440 may also be applied to the embodiment ofFIG. 6, and the connection structure 610 may be applied to theembodiment of FIG. 4. On the other hand, the pixel electrode may bedisposed above the common electrode, and vice versa. In other words,there are three options in these embodiments: whether the touch sensingline 432 covers the data line 431; whether the pixel electrode is abovethe sub-common electrode; and whether the connection structure 440 orthe connection structure 610 is used. These options can be arbitrarilychosen. In addition, whether the data line 431 and the touch sensingline 432 are transferred to the first metal layer M1, the second metallayer M2 or the third metal layer M3 is not limited in the invention. Ina preferred embodiment, the data line 431 and the touch sensing line 432are formed in different metal layers in the non-display area 102, andthus the pitch between them could be reduced.

The signal line transferring area 103 exists in the embodiments above,and the connection structure therein is used to transfer the datalines/touch sensing lines to different metal layers. However, in someembodiments, if the resolution requirement of the panel is relativelylower, then the function of the connection structure may be implementedin the touch pads and/or display pads.

The self-conductive capacitance is used for sensing in the in-cell touchdisplay panel in the specification. That is, a transmitter (TX) sensingsignal and a receiver (RC) sensing signal is transmitted to the touchelectrodes and the touch pads through the touch sensing lines. The metallayer in the specification may be a single layer of metal includingaluminum, copper, titanium, tungsten, etc. or a composite metal layerincluding molybdenum/aluminum/molybdenum, titanium/aluminum/titanium,titanium/copper/titanium or other suitable composite metal layer, whichis not limited in the invention. On the other hand, the insulation layerin the specification may be silicon nitride, silicon oxide, siliconoxynitride or other suitable insulation layer. In addition, a singleinsulation layer in the figures may include more than one stackedinsulation layers with different material. Moreover, some of the contactholes or openings have vertical sidewalls, and some of the contact holesor openings have tapered sidewalls, but it should be appreciated thatall contact holes of openings have tapered sidewalls in practice. Thefigures are just for schematic illustration. When “contact hole toexpose” is described, it means to partially expose the component beneathor to completely expose the component beneath, which is not limited inthe invention.

Herein, examples are provided to describe the method for manufacturingthe in-cell touch display panel. FIG. 10A to FIG. 10G are top views ofintermediary stages for manufacturing pixel stricture in accordance withan embodiment. Referring to FIG. 4, FIG. 5A and FIG. 10A, the firstmetal layer M1 is first formed. Referring to FIG. 4, FIG. 5A and FIG.10B, the first insulation layer INS1 (not shown in FIG. 4 and FIG. 10B)is formed on the first metal layer M1, and then the semiconductor layer420C and ohmic contacts (not shown) on the semiconductor layer 420C areformed. The first insulation layer INS1 may be silicon nitride, siliconoxide or other suitable insulation layer. The semiconductor layer 420Cmay be a-si, polysilicon, or metal oxide, which is not limited in theinvention. The ohmic contacts may be N-type doped polysilicon or metaloxide with high conductivity for electrically connecting thesemiconductor layer 420C and the subsequent second metal layer M2.

Referring to FIG. 4, FIG. 5A and FIG. 10C, the second metal layer M2 isformed. The second metal layer M2 includes the drain 420D and the source420S. Next, the second insulation layer INS2 and the third insulationlayer INS3 are formed on the second metal layer M2. For simplification,the second insulation layer INS2 and the third insulation layer INS3 arenot shown in FIG. 10C. The second insulation layer INS 2 may be siliconnitride, silicon oxide, silicon oxynitride, or other suitable insulationlayer. The third insulation layer INS3 may be an organic insulationlayer.

Referring to FIG. 4, FIG. 5A and FIG. 10D, the first transparentconductive layer 511 is formed. The first transparent conductive layer511 includes the pixel electrode PE. The first transparent conductivelayer 511 may be indium tin oxide (ITO), indium zinc oxide (IZO),antimony tin oxide (ATO), fluorine tin oxide (FTO) or other conductiveand transparent material.

Referring to FIG. 4, FIG. 5A and FIG. 10E, the third metal layer M3 isformed. The third metal layer M3 includes the touch sensing line 432.Referring to FIG. 4, FIG. 5A, and FIG. 10F, the fourth insulation layerINS4 is formed on the third metal layer M3. The fourth insulation layerINS4 has a contact hole 5A_3h to expose a portion of the touch sensingline 432. The fourth insulation layer INS4 may be silicon nitride,silicon oxide, silicon oxynitride, or other suitable insulation layer.

Referring to FIG. 4, FIG. 5A and FIG. 10G, the second transparentconductive layer 512 is formed on the fourth insulation layer INS4. Thesecond transparent conductive layer 512 is electrically connected to thetouch sensing line 432 through the contact hole 5A_3. The secondtransparent conductive layer 512 is taken as the sub-common electrodeCOM in the pixel structure, and it includes at least one slits 512S. Thesecond transparent conductive layer 512 may be indium tin oxide (ITO),indium zinc oxide (IZO), antimony tin oxide (ATO), fluorine tin oxide(FTO) or other conductive and transparent material.

Although the present invention has been described in considerable detailwith reference to certain embodiments thereof, other embodiments arepossible. Therefore, the spirit and scope of the appended claims shouldnot be limited to the description of the embodiments contained herein.It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims.

What is claimed is:
 1. An in-cell touch display panel having a displayarea and a non-display area, wherein the in-cell touch display panelcomprises: a first substrate; a plurality of gate lines and a pluralityof data lines that are intersected with each other on the firstsubstrate; a plurality of touch sensing lines disposed on the firstsubstrate, wherein the touch sensing lines are not spatially connectedwith the data lines in the display area; a plurality of pixel regionsdisposed in areas of the display area enclosed by the gate lines thatare intersected with the data lines, wherein each of the pixel regionshas a pixel structure, and each of the pixel structures comprises apixel electrode formed by a first transparent conductive layer; a commonelectrode formed by a patterned second transparent conductive layer,wherein the common electrode comprises a plurality of touch electrodesin the display area, each of the touch electrodes corresponds to morethan one of the pixel electrodes, each of the pixel electrodescorresponds to a sub-common electrode which is a portion of the touchelectrode, and each of the touch electrodes is electrically connected toat least one of the touch sensing lines; a thin film transistor disposedin one of the pixel structures, wherein the thin film transistorcomprises a gate, a source, a drain and a semiconductor layer, thesource is electrically connected to one of the data lines, and one ofthe pixel electrodes is electrically connected to the drain; a pluralityof display pads and a plurality of touch pads disposed in thenon-display area; a second substrate, wherein a liquid crystal layer isdisposed between the first substrate and the second substrate; a firstinsulation layer disposed between the gate and the semiconductor layer;a second insulation layer disposed on the first insulation layer; athird insulation layer disposed on the second insulation layer; and afourth insulation layer disposed on the third insulation layer, whereinthe sub-common electrodes are disposed on one of the third insulationlayer and fourth insulation layer; a thickness of the third insulationlayer is greater than or equal to a thickness of the second insulationlayer; a thickness of the third insulation layer is 1.2 or more times ofa thickness of the fourth insulation layer; and the thickness of thethird insulation layer is greater than or equal to 5000 Å, wherein a sumof the thickness of the third insulation layer and the thickness of thefourth insulation layer is greater than or equal to 7000 Å.
 2. Thein-cell touch display panel of claim 1, wherein each of the data linesis electrically connected to one of the display pads; each of the touchsensing lines is electrically connected to one of the touch pads; thenon-display area comprises a signal line transferring area and a fan-outarea, wherein the signal line transferring area is located between thedisplay area and the fan-out area, and the touch pads and the displaypads are disposed in the fan-out area; and one of the display pads isdisposed between two of the touch pads, and one of the touch pads isdisposed between two of the display pads.
 3. The in-cell touch displaypanel of claim 1, wherein the number of the touch pads is less than thenumber of the display pads, the display pads and the touch pads arearranged as a plurality of rows, and one of the rows consists of aportion of the touch pads.
 4. The in-cell touch display panel of claim1, wherein the display pads are disposed between the touch pads and thedisplay area.
 5. The in-cell touch display panel of claim 1, wherein thetouch pads are disposed between the display pads and the display area.6. The in-cell touch display panel of claim 1, wherein the display padsand the touch pads are arranged as a plurality of rows, a first row ofthe rows consists of a portion of the display pads, and a second row ofthe rows comprises a portion of the display pads and a portion of thetouch pads.
 7. The in-cell touch display panel of claim 1, furthercomprising a driving circuit that is disposed in the non-display areaand is electrically connected to the display pads and the touch pads,wherein in a display period, the driving circuit transmits pixel data toone of the pixel electrodes through one of the data lines and the thinfilm transistor; and in the touch sensing period, the driving circuitgenerates a touch sensing signal according to a voltage variation of thetouch electrode.
 8. The in-cell touch display panel of claim 1, furthercomprising: a first metal layer disposed on the first substrate, whereinthe first metal layer comprises the gate, the first insulation layer isdisposed on the first metal layer, and the semiconductor layer isdisposed on the first insulation layer; a second metal layer disposed onthe semiconductor layer, wherein the second metal layer comprises thesource and the drain, the second insulation layer is disposed on thesecond metal layer, and the second insulation layer has a first contacthole to expose the drain, wherein the third insulation layer is disposedon the second insulation layer, and the third insulation layer has asecond contact hole corresponding to the first contact hole; and thepixel electrodes are disposed on the third insulation layer, and one ofthe pixel electrodes is electrically connected to the drain through thesecond contact hole and the first contact hole; and a third metal layerdisposed on the third insulation layer, wherein the third metal layercomprises the touch sensing lines; wherein the fourth insulation layeris disposed on the third metal layer, and the fourth insulation layerhas a third contact hole to expose the touch sensing lines; and thesub-common electrodes are disposed on the fourth insulation layer, andone of the sub-common electrodes is electrically connected to one of thetouch sensing lines through the third contact hole.
 9. The in-cell touchdisplay panel of claim 1, further comprising: a first metal layerdisposed on the first substrate, wherein the first metal layer comprisesthe gate, the first insulation layer is disposed on the first metallayer, and the semiconductor layer is disposed on the first insulationlayer; a second metal layer disposed on the semiconductor layer, thesecond metal layer comprises the source and the drain, the secondinsulation layer is disposed on the second metal layer, and the secondinsulation layer has a first contact hole to expose the drain; and athird metal layer disposed on the second insulation layer, wherein thetouch sensing lines are formed by the third metal layer in the displayarea, wherein the third insulation layer is disposed on the third metallayer, the third insulation layer has a second contact hole to exposethe touch sensing lines, and the third insulation layer has a thirdcontact hole corresponding to the first contact hole; the sub-commonelectrodes are disposed on the third insulation layer, one of thesub-common electrodes is electrically connected to one of the touchsensing lines through the second contact hole; the fourth insulationlayer is disposed on the sub-common electrodes, and the fourthinsulation layer has a fourth contact hole corresponding to the thirdcontact hole; and the pixel electrodes are disposed on the fourthinsulation layer, one of the pixel electrodes is electrically connectedto the drain through the fourth contact hole, the third contact hole andthe first contact hole.
 10. The in-cell touch display panel of claim 1,further comprising: a first metal layer disposed on the first substrate,wherein the first metal layer comprises the gate, the first insulationlayer is disposed on the first metal layer, and the semiconductor layeris disposed on the first insulation layer; a second metal layer disposedon the semiconductor layer, wherein the second metal layer comprises thesource and the drain, the second insulation layer is disposed on thesecond metal layer, and the second insulation layer has a first contacthole to expose the drain, wherein the third insulation layer is disposedon the second insulation layer, the third insulation layer has a secondcontact hole corresponding to the first contact hole; and the pixelelectrodes are disposed on the third insulation layer, one of the pixelelectrodes is electrically connected to the drain through the secondcontact hole and the first contact hole; and a third metal layerdisposed on the third insulation layer, wherein the touch sensing linesare formed by the third metal layer in the display area, wherein thefourth insulation layer is disposed on the third metal layer, and thefourth insulation layer has a third contact hole to expose the touchsensing lines; and the sub-common electrodes are disposed on the fourthinsulation layer, one of the sub-common electrodes is electricallyconnected to one of the touch sensing lines through the third contacthole, and one of the touch sensing lines is at least partiallyoverlapped with one of the data lines along a normal vector of thein-cell touch display panel.
 11. The in-cell touch display panel ofclaim 1, further comprising: a first metal layer disposed on the firstsubstrate, wherein the first metal layer comprises the gate, the firstinsulation layer is disposed on the first metal layer, and thesemiconductor layer is disposed on the first insulation layer; a secondmetal layer disposed on the semiconductor layer, wherein the secondmetal layer comprises the source and the drain, the second insulationlayer is disposed on the second metal layer, and the second insulationlayer has a first contact hole to expose the drain, wherein the thirdinsulation layer is disposed on the second insulation layer, the thirdinsulation layer has a second contact hole corresponding to the firstcontact hole, and the sub-common electrodes are disposed on the thirdinsulation layer; and the fourth insulation layer is disposed on thesub-common electrodes and has a third contact hole and fourth contacthole, the third contact hole corresponds to the second contact hole, andthe fourth contact hole exposes one of the sub-common electrodes; and athird metal layer disposed on the fourth insulation layer, wherein thetouch sensing lines are formed by the third metal layer in the displayarea, and one of the touch sensing lines is electrically connected toone of the sub-common electrodes through the fourth contact hole,wherein the first transparent conductive layer comprises the pixelelectrodes and a touch sensing line protection layer, and disposed onthe fourth insulation layer, wherein one of the pixel electrodes iselectrically connected to the drain through the third contact hole, thesecond contact hole and the first contact hole; and the touch sensingline protection layer covers one of the touch sensing lines, and the oneof the touch sensing lines is at least partially overlapped with one ofthe data lines along a normal vector of the in-cell touch display panel.12. The in-cell touch display panel of claim 1, comprising: thesemiconductor layer disposed on the first substrate, wherein thesemiconductor layer comprises the source, a first lightly doped region,a channel region of the thin film transistor, a second lightly dopedregion, and the drain, wherein the channel region is disposed betweenthe first lightly doped region and the second lightly doped region; thefirst insulation layer disposed on the semiconductor layer, wherein thefirst insulation layer has a first contact hole to expose the source,and a second contact hole to expose the drain; a first metal layerdisposed on the first insulation layer, wherein the first metal layercomprises the gate, the second insulation layer is disposed on the firstmetal layer, and the second insulation layer has a third contact holecorresponding to the first contact hole and a fourth contact holecorresponding to the second contact hole, and the pixel electrodes aredisposed on the second insulation layer; a second metal layer disposedon the second insulation layer, wherein the data lines are formed by thesecond metal layer in the display area, one of the data lines iselectrically connected to the source through the third contact hole andthe first contact hole, wherein the second metal layer comprises afilling structure which is electrically connected to one of the pixelelectrodes and is electrically connected to the drain through the fourthcontact hole and the second contact hole, and the third insulation layeris formed on the second metal layer; and a third metal layer disposed onthe third insulation layer, wherein the touch sensing lines are formedby the third metal layer in the display area, the fourth insulationlayer is disposed on the third metal layer, and the fourth insulationlayer has a fifth contact hole to expose one of the touch sensing lines,wherein the sub-common electrodes are disposed on the fourth insulationlayer, and one of the sub-common electrodes is electrically connected toone of the touch sensing lines through the fifth contact hole, whereinthe one of the touch sensing lines is at least partially overlapped withthe one of the data lines along a normal vector of the in-cell touchdisplay panel.
 13. The in-cell touch display panel of claim 1,comprising: the semiconductor layer disposed on the first substrate,wherein the semiconductor layer comprises the source, a first lightlydoped region, a channel region of the thin film transistor, a secondlightly doped region, and the drain, wherein the channel region isdisposed between the first lightly doped region and the second lightlydoped region; the first insulation layer disposed on the semiconductorlayer, wherein the first insulation layer has a first contact hole toexpose the source and a second contact hole to expose the drain; a firstmetal layer disposed on the first insulation layer, wherein the firstmetal layer comprises the gate, the second insulation layer is disposedon the first metal layer , and the second insulation layer has a thirdcontact hole corresponding to the first contact hole, and a fourthcontact hole corresponding to the second contact hole; a second metallayer disposed on the second insulation layer, wherein the data linesare formed by the second metal layer in the display area, one of thedata lines is electrically connected to the source through the thirdcontact hole and the first contact hole, wherein the second metal layercomprises a filling structure which is electrically connected to thedrain through the fourth contact hole and the second contact hole,wherein the third insulation layer is disposed on the second metallayer, the third insulation layer has a fifth contact hole to expose thefilling structure, wherein the sub-common electrodes are disposed on thethird insulation layer, the fourth insulation layer is disposed on thesub-common electrodes, and the fourth insulation layer has a sixthcontact hole corresponding to the fifth contact hole and a seventhcontact hole to expose one of the sub-common electrodes; and a thirdmetal layer disposed on the third insulation layer, wherein the touchsensing lines are formed by the third metal layer in the display area,one of the touch sensing lines is electrically connected to one of thesub-common electrodes through the seventh contact hole, wherein thefirst transparent conductive layer comprises the pixel electrodes and atouch sensing line protection layer, the pixel electrodes are disposedon the fourth insulation layer, and one of the pixel electrodes iselectrically connected to the filling structure through the sixthcontact hole and the fifth contact hole; and the touch sensing lineprotection layer covers the touch sensing lines, and one of the touchsensing lines is at least partially overlapped with one of the datalines along a normal vector of the in-cell touch display panel.
 14. Thein-cell touch display panel of claim 1, comprising: a first metal layerdisposed on the first insulation layer, wherein the first metal layercomprises the gate, the first insulation layer is disposed on the firstmetal layer, the semiconductor layer is disposed on the first insulationlayer, and the semiconductor layer is metal oxide comprising indium,gallium and zinc, wherein the second insulation layer is disposed on thesemiconductor layer, the second insulation layer has a first contacthole and a second contact hole to expose the semiconductor layer, andthe pixel electrodes are disposed on the second insulation layer; asecond metal layer disposed on the second insulation layer to form thesource, the drain and the data lines, wherein the source and the drainare electrically connected to the second contact hole through the firstcontact hole and the semiconductor layer respectively, wherein the drainis electrically connected to one of the pixel electrodes, and the thirdinsulation layer is disposed on the second metal layer; and a thirdmetal layer disposed on the third insulation layer, wherein the touchsensing lines are formed by the third metal layer in the display area,the fourth insulation layer is disposed on the third metal layer, andthe fourth insulation layer has a third contact hole to expose one ofthe touch sensing lines, wherein the sub-common electrodes are disposedon the fourth insulation layer, one of the sub-common electrodes iselectrically connected to one of the touch sensing lines through thethird contact hole, and the one of the touch sensing lines is at leastpartially overlapped with one of the data lines along a normal vector ofthe in-cell touch display panel.
 15. The in-cell touch display panel ofclaim 1, comprising: a first metal layer disposed on the firstsubstrate, wherein the first metal layer comprises the gate, the firstinsulation layer is disposed on the first metal layer, the semiconductorlayer is disposed on the first insulation layer, and the semiconductorlayer is metal oxide comprising indium, gallium and zinc, wherein thesecond insulation layer is disposed on the semiconductor layer, and thesecond insulation layer has a first contact hole and a second contacthole to expose the semiconductor layer; a second metal layer disposed onthe second insulation layer to form the source, the drain and the touchsensing lines, wherein the source and the drain are electricallyconnected to the semiconductor layer through the first contact hole andthe second contact hole respectively, the third insulation layer isdisposed on the second metal layer and has third contact hole to exposeone of the touch sensing lines and a fourth contact hole to expose thedrain, wherein the pixel electrodes are disposed on the third insulationlayer, one of the pixel electrodes is electrically connected to thedrain through the fourth contact hole, the fourth insulation layer isdisposed on the pixel electrode, and the fourth insulation layer has afifth contact hole corresponding to the third contact hole to expose theone of the touch sensing lines; and the sub-common electrode disposed onthe fourth insulation layer, wherein the one of the touch sensing linesis electrically connected to one of the sub-common electrodes throughthe fifth contact hole and the third contact hole.
 16. The in-cell touchdisplay panel of claim 1, wherein one of the touch sensing linescomprises a first portion and a second portion, the first portion isformed by a first metal layer, the second portion is formed by a thirdmetal layer, and the in-cell touch display panel further comprises: aconnection structure disposed in the signal line transferring area andbeing electrically connected to the first portion and the secondportion, wherein the connection structure comprises: the first portiondisposed on the first substrate; the first insulation layer having afirst contact hole to expose the first portion; the second insulationlayer having a second contact hole corresponding to the first contacthole; the second portion disposed on the second insulation layer; thefourth insulation layer having a third contact hole and a fourth contacthole, wherein the third contact hole corresponds to the second contacthole, and the fourth contact hole exposes the second portion; and thesecond transparent conductive layer being electrically connected to thesecond portion through the fourth contact hole, and being electricallyconnected to the first portion through the first contact hole, thesecond contact hole, and the third contact hole.
 17. The in-cell touchdisplay panel of claim 1, wherein one of the touch sensing linescomprises a first portion and a second portion, the first portion isformed by a first metal layer, the second portion is formed by a thirdmetal layer, and the in-cell touch display panel further comprises: aconnection structure disposed in the signal line transferring area andbeing electrically connected to the first portion and the secondportion, wherein the connection structure comprises: the first portiondisposed on the first substrate; the first insulation layer disposed onthe first metal layer and having a first contact hole to expose thefirst portion; a metal electrode formed by the second metal layer, andbeing electrically connected to the first portion through the firstcontact hole; the second insulation layer disposed on second metallayer, and having a second contact hole to expose the first portion; thesecond portion being electrically connected to the first portion throughthe second contact hole; the third insulation layer having a thirdcontact hole to expose the second portion; and an electric connectingportion formed by the second transparent conductive layer and beingelectrically connected to the second portion through the third contacthole.
 18. The in-cell touch display panel of claim 1, wherein one of thetouch sensing lines comprises a first portion and a second portion, thefirst portion is formed by a second metal layer, the second portion isformed by a third metal layer, and the in-cell touch display panelfurther comprises: a connection structure disposed in the signal linetransferring area and being electrically connected to the first portionand the second portion, wherein the connection structure comprises: thefirst insulation layer disposed on the first substrate; the firstportion disposed on the first insulation layer; the second insulationlayer disposed on the first portion and having a first contact hole toexpose the first portion; the second portion disposed on the secondinsulation layer; the fourth insulation layer having a second contacthole and a third contact hole, wherein the second contact holecorresponds to the first contact hole, and the third contact holeexposes the second portion; and the second transparent conductive layerbeing electrically connected to the second portion through the thirdcontact hole, and being electrically connected to the first portionthrough the first contact hole and the second contact hole.
 19. Thein-cell touch display panel of claim 1, wherein one of the touch sensinglines comprises a first portion and a second portion, the first portionis formed by a second metal layer, the second portion is formed by athird metal layer, and the in-cell touch display panel furthercomprises: a connection structure disposed in the signal linetransferring area and being electrically connected to the first portionand the second portion, wherein the connection structure comprises: thefirst insulation layer disposed on the first substrate; the firstportion disposed on the first insulation layer; the second insulationlayer disposed on the first portion and having a first contact hole toexpose the first portion; the second portion disposed on the secondinsulation layer and being electrically connected to the first portionthrough the first contact hole; the fourth insulation layer having asecond contact hole to expose the second portion; and the secondtransparent conductive layer being electrically connected to the secondportion through the second contact hole.
 20. The in-cell touch displaypanel of claim 1, wherein one of the touch sensing lines comprises afirst portion and a second portion, the first portion and the secondportion are formed by a third metal layer, and the in-cell touch displaypanel further comprises: a connection structure disposed in the signalline transferring area and being electrically connected to the firstportion and the second portion, wherein the connection structurecomprises: the first insulation layer disposed on the first substrate;the second insulation layer disposed on the first insulation layer; thefirst portion and the second portion disposed on the second insulationlayer; the fourth insulation layer disposed on the second insulationlayer and having a first contact hole to expose the first portion and asecond contact hole to expose the second portion; and the secondtransparent conductive layer being electrically connected to the firstportion through the first contact hole, and being electrically connectedto the second portion through the second contact hole.
 21. The in-celltouch display panel of claim 1, wherein one of the touch sensing linescomprises a first portion and a second portion, the first portion andthe second portion are formed by a second metal layer, and the in-celltouch display panel further comprises: a connection structure disposedin the signal line transferring area and being electrically connected tothe first portion and the second portion, wherein the connectionstructure comprises: the first insulation layer disposed on the firstsubstrate; the first portion and the second portion disposed on thefirst insulation layer; the second insulation layer disposed on thefirst insulation layer, and having a first contact hole to expose thefirst portion and a second contact hole to expose the second portion;and the first transparent conductive layer being electrically connectedto the first portion through the first contact hole, and beingelectrically connected to the second portion through the second contacthole.
 22. The in-cell touch display panel of claim 1, wherein one of thetouch sensing lines comprises a first portion and a second portion, thefirst portion is formed by a first metal layer, the second portion isformed by a second metal layer, and the in-cell touch display panelfurther comprises: a connection structure disposed in the signal linetransferring area and being electrically connected to the first portionand the second portion, wherein the connection structure comprises: thefirst insulation layer disposed on the first substrate; the firstportion disposed on the first insulation layer; the second insulationlayer disposed on the first portion, and having a first contact hole toexpose the first portion; the second portion disposed on the secondinsulation layer; the third insulation layer having a second contacthole and a third contact hole, wherein the second contact holecorresponds to the first contact hole, and the third contact holeexposes the second portion; and the first transparent conductive layerbeing electrically connected to the second portion through the thirdcontact hole, and being electrically connected to the first portionthrough the first contact hole and the second contact hole.
 23. Thein-cell touch display panel of claim 1, wherein the data lines areparallel with the touch sensing lines in the display area, and are notoverlapped with each other in the fan-out area.
 24. The in-cell touchdisplay panel of claim 1, wherein the data lines and the touch sensinglines are overlapped with each other in the display area along a normalvector of the in-cell touch display panel, wherein the data lines andthe touch sensing lines are formed by different metal layers in thedisplay area.
 25. The in-cell touch display panel of claim 1, wherein atleast two of the touch sensing lines are electrically connected to eachother and are electrically connected to one of the touch pads through aconducting line in the fan-out area.